A heterojunction SnS₂/p-Si photodetector was fabricated by RF magnetron sputtering system.
SnS₂ was formed with 2-inch SnS₂ target. Al was applied as the front and the back metal contacts.
Rapid thermal process was conducted at 500℃ to enhance the contact quality.
2D material such as SnS₂, MoS₂ is very attractive in various fields such as field effect transistors (FET), photovoltaic fields
such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors,
especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment.
Especially, SnS₂ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material.
The large bandgap of SnS₂ offers the advantage for the large on-off current ratio and low leakage current.
The SnS₂/p-Si photodetector clearly shows the current rectification when the thickness of SnS₂ is 80 nm compared to when it is 135 nm. 
The highest photocurrent is 19.73 μA at the wavelength of 740 nm with SnS₂ thickness of 80 nm.
The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.