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제     목 ITO 나노와이어 기반의 투명 산화물 반도체 광전소자
작 성 자 관리자
첨부파일
Abstract: Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.  
234   ITO 나노와이어 기반의 투명 산화물 반도체... 관리자 2021.02.07 877
이전 SnS₂/p-Si 이종접합 광 검출기
다음 ITO/AZO 투명전극을 이용한 Si...