All transparent metal oxide photoelectric device based on V₂O5 was fabricated with structure of V₂O5/ZnO/ITO by magnetron sputtering system.
V₂O5 was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type V2O5 was deposited onto the n-type ZnO layer.
The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed.
The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The V₂O5/ZnO/ITO photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm.
Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent V₂O5 layer absorbs the short wavelength light efficiently while passing the visible light.
This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type V₂O5 metal oxide layer.
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