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Abstract: Thin light-active layers of the CuInSe2 solar cell were prepared on Mo-coated sodalime glass
substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of
CuInSe2 film could be controlled by deposition parameters, such as the composition of metallic precursors,
the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A
dense and uniform Cu-poor CuInSe2 film was successfully obtained in a range of parametric variation of
electrodeposition with a constant voltage of –0.5 V vs. a Ag/AgCl reference electrode. The post-annealing
of the film at high temperature above 500℃ induced crystallization of CuInSe2 with well-developed grains.
The KCN-treatment of the annealed CuInSe2 films further induced Cu-poor CuInSe2 films without secondary
phases, such as Cu2Se. The structure, morphology, and composition of CuInSe2 films were compared with
respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS
analysis. And the conditions for preparing device-quality CuInSe2 films by electrodeposition were proposed.
Keywords: CIS thin film solar cell, CuInSe2, Copper indium diselenide, Electrodeposition, Post-annealing, Selenization
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